參數(shù)資料
型號(hào)： STP7NA60
廠商： 意法半導(dǎo)體
英文描述： N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET)
中文描述： N溝道增強(qiáng)模式快速功率MOS晶體管（不適用溝道增強(qiáng)模式快速功率MOSFET的）
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 206K
代理商： STP7NA60
THERMAL DATA
TO-220
ISOWATT220
R
thj-case
Thermal Resistance Junction-case
Max
1
2.78
o
C/W
o
C/W
o
C/W
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
C, pulse width limited by T
j
max,
δ
< 1%)
7.2
A
E
AS
260
mJ
E
AR
11
mJ
I
AR
4.6
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
600
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
30 V
T
c
= 125
o
C
25
250
±
100
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
I
D
= 3.5 A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
2.25
3
3.75
V
R
DS(on)
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10V
0.92
1
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
7.2
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 3.5 A
4
5.5
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1300
175
45
1690
230
60
pF
pF
pF
STP7NA60/FI
2/10
相關(guān)PDF資料
PDF描述
STP7NA60FI N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET)
STP7NB30 N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
STP7NB30FP N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
STP7NB40 N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
STP7NB40FP N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP7NA60FI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP7NB30 功能描述:MOSFET N-CH 300V 7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP7NB30FP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 300V - 0.75ohm - 7A - TO-220/TO-220FP PowerMESH MOSFET
STP7NB40 功能描述:MOSFET N-Ch 400 Volt 7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP7NB40FP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
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