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參數(shù)資料
| 型號(hào)： | STP6NK70Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 700V - 1.5ohm - 5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET |
| 中文描述： | N溝道高達(dá)700V - 1.5ohm - 5A條TO-220/TO-220FP齊納MOSFET的保護(hù)SuperMESH |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 337K |
| 代理商： | STP6NK70Z |
STP6NK70Z - STF6NK70Z
2/12
Table 3: Absolute Maximum ratings
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
5A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
Table 6: Gate-Source Zener Diode
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device
’
s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device
’
s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
STP6NK70Z
STF6NK70Z
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
700
V
700
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25
°
C
Drain Current (continuous) at T
C
= 100
°
C
5
5 (*)
A
3.15
3.15 (*)
A
Drain Current (pulsed)
20
20 (*)
A
Total Dissipation at T
C
= 25
°
C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
110
30
W
0.87
0.24
W/
°
C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
V
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°
C
°
C
TO-220
1.14
TO-220FP
4.2
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
°
C/W
°
C/W
°
C
62.5
300
Maximum Lead Temperature For Soldering Purpose
Parameter
Max Value
5
Unit
A
200
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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| STP6NK90Z | 功能描述:MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP6NK90Z | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP6NK90Z_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 900V - 1.56ヘ - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH⑩ Power MOSFET |
| STP6NK90ZFP | 功能描述:MOSFET N-Ch, 900V-1.56ohms Zener SuperMESH 5.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP6NM60N | 功能描述:MOSFET N Ch 600V 0.85 Ohm 4.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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