參數(shù)資料
型號(hào)： STP7NA40FI
廠商： 意法半導(dǎo)體
英文描述： N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET)
中文描述： N溝道增強(qiáng)模式快速功率MOS晶體管（不適用溝道增強(qiáng)模式快速功率MOSFET的）
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 201K
代理商： STP7NA40FI
STP7NA40
STP7NA40FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.82
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW INTRINSIC CAPACITANCES
I
GATE GHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized
cell
layout
proprietary edge termination concur to give the
device low R
DS(on)
and gate charge, unequalled
ruggedness and superior switching performance.
coupled
with
a
new
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 1
< 1
I
D
STP7NA40
STP7NA40FI
400 V
400 V
6.5 A
4.1 A
1
2
3
TO-220
ISOWATT220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP7NA40
STP7NA40FI
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
400
V
V
DGR
400
V
V
GS
±
30
V
I
D
6.5
4.1
A
I
D
4.1
2.6
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
26
26
A
100
40
W
Derating Factor
0.8
0.32
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1
2
3
1/10
相關(guān)PDF資料
PDF描述
STP7NA60 N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET)
STP7NA60FI N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET)
STP7NB30 N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
STP7NB30FP N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
STP7NB40 N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP7NA60 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP7NA60FI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP7NB30 功能描述:MOSFET N-CH 300V 7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP7NB30FP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 300V - 0.75ohm - 7A - TO-220/TO-220FP PowerMESH MOSFET
STP7NB40 功能描述:MOSFET N-Ch 400 Volt 7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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