參數(shù)資料
型號(hào)： STP60NE06-16FP
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
中文描述： ? -通道增強(qiáng)型單特征尺寸功率MOSFET
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 120K
代理商： STP60NE06-16FP
STP60NE06-16
STP60NE06-16FP
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
” POWER MOSFET
I
TYPICAL R
DS(on)
= 0.013
I
EXCEPTIONAL dV/dt CAPABILTY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE 100
o
C
I
HIGH dV/dt CAPABILITY
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
APPLICATIONS
I
DC MOTOR CONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP60NE06-16
STP60NE06-16FP
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
60
±
20
V
V
GS
V
I
D
I
D
60
35
A
42
24
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
240
240
A
P
tot
150
40
W
Derating Factor
1
0.3
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
dV/dt
Peak Diode Recovery voltage slope
6
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
December 1997
175
(
1
) I
SD
≤
60 A,di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.016
< 0.016
I
D
STP60NE06-16
STP60NE06-16FP
60 V
60 V
60 A
35 A
TO-220
TO220FP
1
2
3
1
2
3
1/9
相關(guān)PDF資料
PDF描述
STP60NE06-16FI TRANSISTOR MOSFET
STP60NE06L-16FP Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:7; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:22-96
STP60NS04ZB N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY⑩ MOSFET
STP6N25 N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET)
STP6N25FI N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP60NE06L-16 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP60NE06L-16FI 制造商:STMicroelectronics 功能描述:MOSFET N LOGIC ISOWATT-220
STP60NE06L-16FP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET POWER MOSFET
STP60NE10 功能描述:MOSFET N-Ch 100 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP60NE10FP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET
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