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參數(shù)資料
| 型號(hào)： | STP55NE06L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強(qiáng)模式功率MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式“的單一的功能SIZETM”功率MOSFET（不適用溝道增強(qiáng)模式功率MOSFET的） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | STP55NE06L |
STP55NE06L
STP55NE06LFP
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
” POWER MOSFET
I
TYPICALR
DS(on)
= 0.018
I
EXCEPTIONALdV/dt CAPABILTY
I
100%AVALANCHE TESTED
I
LOW GATE CHARGE 100
o
C
I
HIGH dV/dtCAPABILITY
I
APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
APPLICATIONS
I
DC MOTOR CONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP55NE06L
STP55NE06LFP
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
60
±
15
V
V
GS
V
I
D
I
D
55
28
A
39
20
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
220
220
A
P
tot
130
35
W
Derating Factor
0.86
0.23
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
dV/dt
Peak Diode Recovery voltage slope
7
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
December 1997
175
(
1
) I
SD
≤
55 A,di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.022
< 0.022
I
D
STP55NE06L
STP55NE06LFP
60 V
60 V
55 A
28 A
TO-220
TO220FP
1
2
3
1
2
3
1/6
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PDF描述 |
|---|---|
| STP55NE06LFP | N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強(qiáng)模式功率MOSFET) |
| STP55NE06 | N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強(qiáng)模式功率MOSFET) |
| STP55NE06FP | N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強(qiáng)模式功率MOSFET) |
| STP5N30L | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET) |
| STP5N30 | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP55NE06LFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STP55NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET |
| STP55NF06 | 功能描述:MOSFET N-Ch 60 Volt 55 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP55NF06 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP55NF06FP | 功能描述:MOSFET N-Ch 60 Volt 55 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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