參數(shù)資料
型號(hào)： STP55NE06
廠商： 意法半導(dǎo)體
英文描述： N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強(qiáng)模式功率MOSFET)
中文描述： N溝道增強(qiáng)模式“的單一的功能SIZETM”功率MOSFET（不適用溝道增強(qiáng)模式功率MOSFET的）
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 120K
代理商： STP55NE06
STP55NE06
STP55NE06FP
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
” POWER MOSFET
I
TYPICAL R
DS(on)
= 0.019
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE 100
o
C
I
HIGH dv/dt CAPABILITY
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
resulting transistor
APPLICATIONS
I
DC MOTORCONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP55NE06
STP55NE06FP
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
60
±
20
V
V
GS
V
I
D
I
D
55
30
A
39
21
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
220
220
A
P
tot
130
35
W
Derating Factor
0.96
0.27
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
dv/dt
Peak Diode Recovery voltage slope
7
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
January 1998
175
(
1
) I
SD
≤
55 A,di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.022
< 0.022
I
D
STP55NE06
STP55NE06FP
60 V
60 V
55 A
30 A
TO-220
TO-220FP
1
2
3
1
2
3
1/9
相關(guān)PDF資料
PDF描述
STP55NE06FP N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強(qiáng)模式功率MOSFET)
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STP5N30 N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET)
STP5N30FI N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET)
STP5NC50 N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP55NE06FP 制造商:STMicroelectronics 功能描述:MOSFET, N TO-220FP
STP55NE06L 功能描述:MOSFET TO-220 N-CH 60V 55A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP55NE06LFP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STP55NF03L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET
STP55NF06 功能描述:MOSFET N-Ch 60 Volt 55 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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