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  • 參數(shù)資料
    型號: STP5NC50
    廠商: 意法半導(dǎo)體
    英文描述: N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET
    中文描述: N溝道500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh第二MOSFET的⑩
    文件頁數(shù): 1/12頁
    文件大?。?/td> 534K
    代理商: STP5NC50
    1/12
    December 2002
    STP5NC50 - STP5NC50FP
    STB5NC50 - STB5NC50-1
    N-CHANNEL 500V - 1.3
    - 5.5A TO-220/FP/D
    2
    PAK/I
    2
    PAK
    PowerMeshII MOSFET
    I
    TYPICAL R
    DS
    (on) = 1.3
    I
    EXTREMELY HIGH dv/dt CAPABILITY
    I
    100% AVALANCHE TESTED
    I
    NEW HIGH VOLTAGE BENCHMARK
    I
    GATE CHARGE MINIMIZED
    DESCRIPTION
    The PowerMESH
    II is the evolution of the first
    generation of MESH OVERLAY
    .
    The layout re-
    finements introduced greatly improve the Ron*area
    figure of merit while keeping the device at the lead-
    ing edge for what concerns swithing speed, gate
    charge and ruggedness.
    APPLICATIONS
    I
    HIGH CURRENT, HIGH SPEED SWITCHING
    I
    SWITH MODE POWER SUPPLIES (SMPS)
    I
    DC-AC CONVERTERS FOR WELDING
    EQUIPMENT AND UNINTERRUPTIBLE
    POWER SUPPLIES AND MOTOR DRIVES
    ABSOLUTE MAXIMUM RATINGS
    Symbol
    ()Pulse width limited by safe operating area
    (1)I
    SD
    5.5A, di/dt
    100A/μs, V
    DD
    V
    (BR)DSS
    , T
    j
    T
    JMAX.
    TYPE
    V
    DSS
    R
    DS(on)
    I
    D
    STP5NC50
    STP5NC50FP
    STB5NC50
    STB5NC50-1
    500 V
    500 V
    500 V
    500 V
    < 1.5
    < 1.5
    < 1.5
    < 1.5
    5.5A
    5.5A
    5.5A
    5.5A
    Parameter
    Value
    Unit
    STP5NC50
    STB5NC50/-1
    STP5NC50FP
    V
    DS
    V
    DGR
    V
    GS
    I
    D
    I
    D
    I
    DM
    ( )
    P
    TOT
    Drain-source Voltage (V
    GS
    = 0)
    Drain-gate Voltage (R
    GS
    = 20 k
    )
    500
    V
    500
    V
    Gate- source Voltage
    ±30
    V
    Drain Current (continuos) at T
    C
    = 25°C
    Drain Current (continuos) at T
    C
    = 100°C
    5.5
    5.5(*)
    A
    3.5
    3.5(*)
    A
    Drain Current (pulsed)
    22
    22
    A
    Total Dissipation at T
    C
    = 25°C
    Derating Factor
    Peak Diode Recovery voltage slope
    100
    35
    W
    0.8
    0.28
    W/°C
    V/ns
    dv/dt(1)
    V
    ISO
    T
    j
    T
    stg
    3.5
    Insulation Withstand Voltage (DC)
    -
    2500
    V
    Operating Junction Temperature
    Storage Temperature
    -55 to 175
    -65 to 175
    °C
    °C
    (*)Limited only by maximum temperature allowed
    INTERNAL SCHEMATIC DIAGRAM
    TO-220
    TO-220FP
    1
    3
    D
    2
    PAK
    123
    I
    2
    PAK
    相關(guān)PDF資料
    PDF描述
    STB5NC50-1 N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET
    STP5NC50FP N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET
    STB5NC50T4 N-CHANNEL 500V - 1.3 OHM - 5.5A - TO-220/TO-220FP/D2PAK/I2PAK POWERMESH II MOSFET
    STB5NC50 N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET
    STP5NC70ZFP N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    STP5NC50FP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET
    STP5NC70Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
    STP5NC70ZFP 制造商:STMicroelectronics 功能描述:
    STP5NC90Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
    STP5NC90ZFP 制造商:STMicroelectronics 功能描述: