參數(shù)資料
型號： STP50NE10L
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOSFET
中文描述： ? - 100V的通道- 0.020ohm - 50A至- 220 STripFET功率MOSFET
文件頁數(shù)： 1/8頁
文件大小： 86K
代理商： STP50NE10L
STP50NE10L
N - CHANNEL 100V - 0.020
- 50A TO-220
STripFET
POWER MOSFET
s
TYPICAL RDS(on) = 0.020
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE AT 100
oC
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
”Single
Feature
Size
” strip-based
process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
rugged
avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
May 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS =20 k
)
100
V
VGS
G ate-source Volt age
± 20
V
ID
Drain Current (continuous) at Tc =25
oC50
A
ID
Drain Current (continuous) at Tc =100
oC35
A
IDM (
)
Drain Current (pulsed)
200
A
Ptot
T otal Dissipat ion at Tc =25
oC
150
W
Derating Factor
1
W /
o C
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns
Tstg
Storage Temperature
-65 to 175
o C
Tj
Max. Operating Junction Temperature
175
o C
(
) Pulse width limited by safe operating area
( 1)ISD
≤ 50 A, di/dt ≤ 275 A/s, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
TYPE
VDSS
RDS(on)
ID
STP50NE10L
100 V
<0.025
50 A
1
2
3
TO-220
1/8
相關(guān)PDF資料
PDF描述
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