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參數(shù)資料
| 型號： | STP5NB100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET |
| 中文描述： | ? -頻道1000V - 2.4ohm - 5A條- TO-220/TO-220FP PowerMESH MOSFET的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 106K |
| 代理商： | STP5NB100 |
STP5NB100
STP5NB100FP
N - CHANNEL 1000V - 2.4
- 5A - TO-220/TO-220FP
PowerMESH
MOSFET
ν
TYPICAL RDS(on) = 2.4
ν
EXTREMELY HIGH dv/dt CAPABILITY
ν
100% AVALANCHE TESTED
ν
VERY LOW INTRINSIC CAPACITANCES
ν
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
ν
HIGH CURRENT, HIGH SPEED SWITCHING
ν
SWITCH MODE POWER SUPPLIES (SMPS)
ν
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
February 2000
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Uni t
ST P5NB100
STP5NB100FP
VDS
Drain-source Voltage (VGS =0)
1000
V
VDGR
Drain- gate Voltage (RGS =20 k
)
1000
V
VGS
G ate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc =25
oC
5
5(*)
A
ID
Drain Current (continuous) at Tc =100
oC
3.1
3.1(*)
A
IDM(
)
Drain Current (pulsed)
15.2
15. 2
A
Ptot
T otal Dissipat ion at Tc =25
oC
135
40
W
Derat ing Factor
1.08
0.32
W/
oC
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ ns
VISO
I nsulat ion W ithst and Voltage (DC)
2000
V
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operat ing Junction Temperature
150
oC
(
) Pulse width limited by safe operating area
(1)ISD
≤ 5 A, di/dt ≤ 200 A/s, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
(*) Limited only by maximum temperature allowed
T YPE
VDSS
RDS(on)
ID
STP5NB100
STP5NB100F P
1000 V
<2.7
<2.7
5A
1/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP5NB100FP | JFET; Breakdown Voltage, V(br)gss:-40V; Zero Gate Voltage Drain Current Min, Idss:50mA; Zero Gate Voltage Drain Current Max, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Leaded Process Compatible:No RoHS Compliant: No |
| STP5NK65Z | JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No |
| STP6NB90FP | N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET |
| STP6X1MIG | INTERCONNECTION DEVICE |
| STP6X7MIG | INTERCONNECTION DEVICE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP5NB100 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP5NB100FP | 制造商:STMicroelectronics 功能描述:Trans MOSFET N-CH 1KV 5A 3-Pin(3+Tab) TO-220FP Tube |
| STP5NB40 | 功能描述:MOSFET N-Ch 400 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP5NB40FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| STP5NB60 | 功能描述:MOSFET RO 511-STP4NK60Z RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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