- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄195894 > STP6NB90FP (意法半導(dǎo)體) N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET PDF資料下載
參數(shù)資料
| 型號： | STP6NB90FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET |
| 中文描述： | ? -頻道900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 109K |
| 代理商： | STP6NB90FP |
STP6NB90
STP6NB90FP
N - CHANNEL 900V - 1.7
- 5.8A - TO-220/TO-220FP
PowerMESH
MOSFET
s
TYPICAL RDS(on) = 1.7
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
June 1999
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
STP6NB90
STP6NB90F P
VDS
Drain-source Voltage (VGS =0)
900
V
VDGR
Drain- gate Volt age (RGS =20 k
)
900
V
VGS
G ate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc =25
oC5.8
5.8(*)
A
ID
Drain Current (continuous) at Tc =100
oC3.6
3.6(*)
A
IDM (
)
Drain Current (pulsed)
23
A
Ptot
T otal Dissipation at Tc =25
oC
135
40
W
Derating Factor
0.92
0.32
W /
o C
dv/dt (1)
Peak Diode Recovery volt age slope
4.5
V/ns
VISO
I nsulat ion W ithstand Voltage (DC)
2000
V
Tstg
Storage Temperat ure
-65 to 150
o C
Tj
Max. Operating Junction Temperature
150
o C
(
) Pulse width limited by safe operating area
( 1)ISD
≤ 6Α, di/dt ≤ 200 A/s, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
(*) Limited only by maximum temperature allowed
TYPE
VDSS
RDS(on)
ID
ST P6NB90
ST P6NB90FP
900 V
<2
<2
5.8 A
1/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP6X1MIG | INTERCONNECTION DEVICE |
| STP6X7MIG | INTERCONNECTION DEVICE |
| STPF1020CTN | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| STPF1020CT | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| STPR1030D | 10 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP6NC60 | 功能描述:MOSFET N-CH 600V 6A TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:PowerMESH™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| STP6NC60FP | 功能描述:MOSFET N-Ch 600 Volt 6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP6NC80FP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.1A I(D) | TO-220FP |
| STP6NC80Z | 功能描述:MOSFET TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP6NC80ZFP | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。