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參數(shù)資料
| 型號： | STPF1020CTN |
| 廠商： | LITE-ON ELECTRONICS INC |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 71K |
| 代理商： | STPF1020CTN |
STPF1020CTN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR 0.25A.
3. Device mounted on 100 mm x 100 mm x 1.6 mm Cu Plate Heatsink.
VRMS
VDC
VRRM
I(AV)
IFSM
VF
Maximum Average Forward
Rectified Current
@TC
=125℃
Non Repetitive Peak Forward
Surge Current Per Diode
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage
Pulse Width =300us
Duty cycle
10
℃
TJ,TSTG
Operating and Storage Temperature Range
-55 to +150
Typical Thermal Resistance (Note 3)
Rθ JC
4.0
/W
℃
CJ
Typical Junction Capacitance
per element (Note 1)
60
pF
IR
@TJ =100℃
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25℃
10
250
uA
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Maximum Reverse Recovery Time (Note 2)
TRR
ns
TP
=8.3ms
55
SUPER FAST
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE - 200 Volts
FORWARD CURRENT - 10 Amperes
SEMICONDUCTOR
LITE-ON
IF=5A@TJ =25℃
IF=5A@TJ =125℃
IF=10A@TJ =25℃
IF=10A@TJ =125℃
REV. 1, Aug-2007, KTGC24
140
200
STPF1020CTN
1.1
1.0
1.25
1.20
30
ITO-220AB
PIN 1
PIN 3
PIN 2
CASE
All Dimensions in millimeter
ITO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
15.50
16.50
10.40
10.0
3.00
3.50
9.30
9.00
2.90
3.60
13.46
14.22
1.15
1.70
0.50
2.70
N
M
L
K
J
I
0.70
2.40
0.70
0.45
3.00
3.30
4.36
4.77
2.48
2.80
2.50
G
I
C
E
J
B
K
A
M
D
L
N
F
H
PIN
1
2
3
Vdis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
@TJ
=25℃
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