參數(shù)資料
型號: STP36NE06FP
廠商: 意法半導(dǎo)體
英文描述: N-Channel 60V-0.032Ω-36A- TO-220/TO-220FP STripFETTM Power MOSFET(N溝道功率MOSFET)
中文描述: N溝道60V的,0.032Ω- 36A條,TO-220/TO-220FP STripFETTM功率MOSFET(不適用溝道功率MOSFET的)
文件頁數(shù): 1/9頁
文件大小: 111K
代理商: STP36NE06FP
STP36NE06
STP36NE06FP
N - CHANNEL 60V - 0.032
- 36A - TO-220/TO-220FP
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.032
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size
strip-based process. The
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
resulting transistor
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SOLENOID ANDRELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP36NE06
STP36NE06FP
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
60
±
20
V
V
GS
V
I
D
I
D
36
20
A
24
14
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
144
144
A
P
tot
100
35
W
Derating Factor
0.66
0.27
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
dv/dt
Peak Diode Recovery voltage slope
7
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
July 1998
175
(
1
) I
SD
36 A,di/dt
300 A/
μ
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.040
< 0.040
I
D
STP36NE06
STP36NE06FP
60 V
60 V
36 A
20 A
TO-220
TO-220FP
1
2
3
1
2
3
1/9
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