參數(shù)資料
型號(hào): STP3NC60FP
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET
中文描述: N溝道600V的- 3.3ohm -第3A MOSFET的TO-220/TO-220FP PowerMeshII
文件頁數(shù): 1/9頁
文件大?。?/td> 108K
代理商: STP3NC60FP
1/9
May 2000
STP3NC60
STP3NC60FP
N-CHANNEL 600V - 3.3
- 3A TO-220/TO-220FP
PowerMesh
II MOSFET
I
TYPICAL R
DS
(on) = 3.3
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)Pulse width limitedby safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP3NC60
600 V
<3.6
3 A
STP3NC60FP
600V
<3.6
2 A
Parameter
Value
Unit
STP3NC60
STP3NC60FP
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
DGR
600
V
V
GS
Gate- source Voltage
Drain Current (continuos) at T
C
= 25
°
C
Drain Current (continuos) at T
C
= 100
°
C
±
30
V
I
D
3
3
A
I
D
1.9
1.9(*)
A
I
DM
(
G
)
P
TOT
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
12
12(*)
A
80
40
W
0.64
0.32
W/
°
C
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
3.5
V
ISO
T
stg
T
j
Insulation Withstand Voltage (DC)
-
2000
Storage Temperature
–60 to 150
°
C
°
C
Max. Operating Junction Temperature
150
(1)I
SD
3A, di/dt
100A/
μ
s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*)Limited only by maximum temperature allowed
INTERNAL SCHEMATIC DIAGRAM
1
2
3
1
2
3
TO-220
TO-220FP
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