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參數(shù)資料
| 型號： | STP32N06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增強型功率MOS器件 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 201K |
| 代理商： | STP32N06 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 25 V
R
G
= 50
(see test circuit, figure 3)
V
DD
= 40 V
R
G
= 50
(see test circuit, figure 5)
V
DD
= 40 V
I
D
= 16 A
V
GS
= 5 V
60
430
90
630
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 32 A
V
GS
= 5 V
130
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 32 A
V
GS
= 5 V
25
9
12
35
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 40 V
R
G
= 50
(see test circuit, figure 5)
I
D
= 32 A
V
GS
= 5 V
90
140
250
130
200
350
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
32
128
A
A
V
SD
(
)
t
rr
I
SD
= 32 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
C
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 32 A
V
DD
= 25 V
(see test circuit, figure 5)
100
0.2
4
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
STP36N06L/FI
3/10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP32N06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP32N06LFI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP32N65M5 | 功能描述:MOSFET N-channel 650 V MDMesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP32N65M5-CUT TAPE | 制造商:ST 功能描述:STP32N Series N Channel 650 V 24 A 119 mOhm Power Mosfet - TO-220 |
| STP32NM50N | 功能描述:MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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