參數(shù)資料
型號(hào)： STP36N05L
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
中文描述： ? -通道增強(qiáng)型功率MOS器件
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 204K
代理商： STP36N05L
STP36N05L
STP36N05LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.033
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
LOGIC LEVEL COMPATIBLE INPUT
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220
ISOWATT220
November 1996
TYPE
V
DSS
R
DS(on)
< 0.04
< 0.04
I
D
STP36N05L
STP36N05LFI
50 V
50 V
36 A
21 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP36N05L
STP36N05LFI
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
50
V
V
DGR
50
V
V
GS
±
15
V
I
D
36
21
A
I
D
25
14
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
144
144
A
120
40
W
Derating Factor
0.8
0.27
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
175
1
2
3
1/10
相關(guān)PDF資料
PDF描述
STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP36N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP36NF06 N-CHANNEL 60V - 0.032 - 30A TO-220/TO-220FP STripFET II POWER MOSFET
STP36NF06FP N-CHANNEL 60V - 0.032 - 30A TO-220/TO-220FP STripFET II POWER MOSFET
STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP36N05LFI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP36N06 功能描述:MOSFET TO-220 N-CH 60V 18A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP36N06FI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP36N06L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP36N06LFI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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