參數(shù)資料
型號(hào): STP36N05L
廠商: 意法半導(dǎo)體
英文描述: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
中文描述: ? -通道增強(qiáng)型功率MOS器件
文件頁(yè)數(shù): 3/10頁(yè)
文件大小: 204K
代理商: STP36N05L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 25 V
R
G
= 50
(see test circuit, figure 3)
V
DD
= 40 V
R
G
= 50
(see test circuit, figure 5)
V
DD
= 40 V
I
D
= 18 A
V
GS
= 5 V
90
550
130
800
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 36 A
V
GS
= 5 V
85
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 36 A
V
GS
= 5 V
35
11
19
50
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 40 V
R
G
= 50
(see test circuit, figure 5)
I
D
= 36 A
V
GS
= 5 V
110
180
310
160
260
450
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
36
144
A
A
V
SD
(
)
t
rr
I
SD
= 36 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
C
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 36 A
V
DD
= 30 V
(see test circuit, figure 5)
100
0.27
5.5
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
STP36N05L/FI
3/10
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