- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄381116 > STP2230SOP Bus Exchanger PDF資料下載
參數(shù)資料
| 型號(hào)： | STP2230SOP |
| 英文描述： | Bus Exchanger |
| 中文描述： | 總線交換 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 356K |
| 代理商： | STP2230SOP |
1/10
ADVANCED DATA
January 2003
STP22NM50 - STP22NM50FP
STB22NM50 - STB22NM50-1
N-CHANNEL 500V - 0.16
- 20A TO-220/FP/D
2
PAK/I
2
PAK
MDmeshPower MOSFET
I
TYPICAL R
DS
(on) = 0.16
I
HIGH dv/dt AND AVALANCHE CAPABILITIES
I
100% AVALANCHE TESTED
I
LOW INPUT CAPACITANCE AND GATE CHARGE
I
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition’s products.
APPLICATIONS
The MDmesh family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
R
ds(on)
*Q
g
I
D
STP22NM50
STP22NM50FP
STB22NM50
STB22NM50-1
500 V
500 V
500 V
500 V
<0.215
<0.215
<0.215
<0.215
6.4
*nC
6.4
*nC
6.4
*nC
6.4
*nC
20 A
20 A
20 A
20 A
Parameter
Value
Unit
STP(B)22NM50(-1)
STP22NM50FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
500
V
500
V
Gate- source Voltage
±30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
20
20(*)
A
12.6
12.6(*)
A
Drain Current (pulsed)
80
80(*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
192
45
W
1.2
0.36
W/°C
V/ns
dv/dt(1)
V
ISO
T
stg
T
j
15
Insulation Winthstand Voltage (DC)
--
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
(1)I
SD
≤
20A, di/dt
≤
400A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*)Limited only by maximum temperature allowed
TO-220
1
2
3
TO-220FP
123
I2PAK
(Tabless TO-220)
1
3
D
2
PAK
I
NTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP2230SOP-100 | Bus Exchanger |
| STP22NE03 | TERMINAL |
| STP2N60FI | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET) |
| STP2N60 | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET) |
| STP2N80 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP2230SOP-100 | 制造商:Texas Instruments 功能描述: |
| STP-225 | 制造商:Sima Products 功能描述:225W Smooth Start Power Inverter 制造商:SIMA 功能描述:225W POWER INVERTER SMOOTH START |
| STP22NE03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STP22NE03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STP22NE10L | 制造商:STMicroelectronics 功能描述:STP22NE10L - Rail/Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。