參數(shù)資料
型號(hào): STP2N80
廠商: 意法半導(dǎo)體
英文描述: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
中文描述: ? -通道增強(qiáng)型功率MOS器件
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 202K
代理商: STP2N80
STP2N80
STP2N80FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 5
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW INPUT CAPACITANCE
I
LOW GATE CHARGE
I
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES (SMPS)
I
CONSUMER AND INDUSTRIAL LIGHTING
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 7
< 7
I
D
STP2N80
STP2N80FI
800 V
800 V
2.4 A
1.5 A
1
2
3
TO-220
ISOWATT220
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP2N80
STP2N80FI
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
800
V
V
DGR
800
V
V
GS
±
20
V
I
D
2.4
1.5
A
I
D
1.5
0.95
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
9.6
9.6
A
90
35
W
Derating Factor
0.72
0.28
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1
2
3
1/10
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