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參數(shù)資料
| 型號： | STP210NF02 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 20V - 0.0026 ohm - 120A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道20V的- 0.0026歐姆- 120A條?巴基斯坦/我PAK/TO-220 STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 609K |
| 代理商： | STP210NF02 |
STB210NF02/-1 STP210NF02
2/14
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(T
case
= 25 °C unless otherwise specified)
OFF
ON
(*
)
DYNAMIC
Rthj-case
Rthj-amb
Rthj-pcb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Junction-pcb
Maximum Lead Temperature For Soldering Purpose
(for 10 sec. 1.6 mm from case)
Max
Max
Max
Typ
0.5
62.5
see curve on page 6
300
°C/W
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 μA
V
GS
= 0
20
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
1
10
μA
μA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 μA
2
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 50 A
2.6
3.2
m
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS =
10 V
I
D
= 50 A
130
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 15V, f = 1 MHz, V
GS
= 0
5100
3500
800
pF
pF
pF
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