參數(shù)資料
型號(hào)： STB24NF10
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET
中文描述： ? -通道30V的- 0.034ohm - 22A條，263 STripFET]功率MOSFET
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 48K
代理商： STB24NF10
STB24NF10
N - CHANNEL 100V - 0.07
- 24A TO-263
LOW GATE CHARGE STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.07
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWERPACKAGEIN TAPE& REEL
(SUFFIX ”T4”)
DESCRIPTION
This
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable
as
primary
high-efficiency, high-frequency isolated DC-DC
converters
for
Telecom
applications.
It
is
also
applicationswith low gate drive requirements.
MOSFET
series
realized
with
switch
in
advanced
and
Computer
for
intended
any
APPLICATIONS
I
HIGH-EFFICIENCYDC-DC CONVERTERS
I
UPSAND MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
April 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
100
100
±
20
24
15
96
80
0.53
9
75
-65 to 175
175
(1) I
SD
≤
24 A, di/dt
≤
300A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMA
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
mJ
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operatingarea
dv/dt(
1
)
E
AS
(
2
)
T
stg
T
j
(2) starting T
j
= 25
o
C, I
D
=24A, V
DD
= 50V
TYPE
V
DSS
R
DS(on)
< 0.077
I
D
STB24NF10
100 V
24 A
1
3
D
2
PAK
TO-263
(Suffix ”T4”)
1/6
相關(guān)PDF資料
PDF描述
STB24NF10T4 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 26A I(D) | TO-263AB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB24NF10_06 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET
STB24NF10T4 制造商:STMicroelectronics 功能描述:TRANS MOSFET N-CH 100V 24A 3PIN D2PAK - Tape and Reel
STB24NM60N 功能描述:MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB24NM65N 功能描述:MOSFET N-Channel 650V 0.16 Ohms 19A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB25N80K5 功能描述:MOSFET N-Ch 800V 0.19 Ohm 19.5A SuperMESH 5 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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