參數(shù)資料
型號： STB210NF02-1
廠商： 意法半導(dǎo)體
英文描述： Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:2.5VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:470uF; Capacitance Tolerance:+/- 20%; ESR:55mohm; Operating Temp. Max:125 C RoHS Compliant: Yes
中文描述： N溝道20V的- 0.0026歐姆- 120A條?巴基斯坦/我PAK/TO-220 STripFET⑩二功率MOSFET
文件頁數(shù)： 1/14頁
文件大?。?/td> 609K
代理商： STB210NF02-1
1/14
AUTOMOTIVE SPECIFIC
October 2002
.
STP210NF02
STB210NF02 STB210NF02-1
N-CHANNEL 20V - 0.0026
- 120A D
2
PAK/I
2
PAK/TO-220
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0026
I
STANDARD THRESHOLD DRIVE
I
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
reproducibility.
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STB210NF02/-1
STP210NF02
20 V
20 V
<0.0032
<0.0032
120 A
(**)
120 A
(**)
1
2
3
1
3
123
TO-220
D
2
PAK
TO-263
I
2
PAK
TO-262
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB210NF02
STB210NF02T4
STP210NF02
STB210NF02-1
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(**)
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I
≤
120A, di/dt
≤
250A/μs, V
≤
V
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 14 V
MARKING
B210NF02
B210NF02
P210NF02
B210NF02
PACKAGE
D
2
PAK
D
2
PAK
TO-220
I
2
PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
Parameter
Value
20
20
± 20
120
120
480
300
2.0
1
2.3
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
-55 to 175
°C
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB210NF02T4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 120A I(D) | TO-263AB
STB21N65M5 功能描述:MOSFET POWER MOSFET N-CH 650V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB21N90K5 功能描述:MOSFET N-Ch 900V 0.25 Ohm 18.5A SuperMESH 5 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB21NK50Z 功能描述:MOSFET N-ch 500 Volt 17Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB21NM50N 功能描述:MOSFET 500V 0.15Ohm 18A N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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