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參數(shù)資料
| 型號： | STP190NF04 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 40V - 3.9 mW - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET |
| 中文描述： | N溝道40V的- 3.9毫瓦- 120A條D2PAK/I2PAK/TO-220 STripFET二功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 173K |
| 代理商： | STP190NF04 |
1/9
PRELIMINARY DATA
February
200
4
STP190NF04
STB190NF04 STB190NF04-1
N-CHANNEL 40V - 3.9 m
- 120A D
2
PAK/I
2
PAK/TO-220
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) =3.9 m
I
STANDARD THRESHOLD DRIVE
I
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less
critical
alignment
remarkable manufacturing reproducibility.
steps
therefore
a
APPLICATIONS
I
HIGH CURENT, HIGH SWITCHING SPEED
I
AUTOMOTIVE
TYPE
V
DSS
R
DS(on)
I
D
STB190NF04/-1
STP190NF04
40 V
40 V
<0.0043
<0.0043
120 A
120 A
1
2
3
1
3
123
TO-220
D
2
PAK
TO-263
I
2
PAK
TO-262
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(
)
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Current limited by package
(
)
Pulse width limited by safe operating area.
1) I
SD
≤
190A, di/dt
≤
600A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
Parameter
Value
40
40
± 20
120
120
480
310
2.07
7
860
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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