- 您現(xiàn)在的位置：買賣IC網 > PDF目錄380786 > STP14NK60Z (意法半導體) 30V N-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | STP14NK60Z |
| 廠商： | 意法半導體 |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 2/17頁 |
| 文件大小： | 553K |
| 代理商： | STP14NK60Z |
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
2/17
Table 3: Absolute Maximum ratings
Symbol
( )
Pulse width limited by safe operating area
(1) I
SD
≤
13.5A, di/dt
≤
200 A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
TO-220/D2PAK/I2PAK
TO-247
TO-220FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
Ω
)
600
V
600
V
Gate-source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
13.5
13.5 (*)
A
8.5
8.5 (*)
A
Drain Current (pulsed)
54
54 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD (HBM-C= 100pF, R= 1.5k
Ω
)
Peak Diode Recovery voltage slope
160
40
W
1.28
0.32
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
V
4.5
V/ns
Insulation Winthstand Voltage (DC)
--
2500
V
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220/D2PAK/I2PAK
TO-247
TO-220FP
Unit
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.78
62.5
3.1
50
°C/W
°C/W
°C
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
12
Unit
A
300
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate source Breakdown
Voltage
I
gs
= ± 1 mA
(Open Drain)
30
V
相關PDF資料 |
PDF描述 |
|---|---|
| STW15NK90Z | N-CHANNEL 900V - 0.40W - 15A TO-247 Zener-Protected SuperMESH?Power MOSFET |
| ST_STW15NK90Z | N-CHANNEL 900V - 0.40W - 15A TO-247 Zener-Protected SuperMESH?Power MOSFET |
| STW18NB40FI | N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET |
| STW18NB40 | N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET |
| STH18NB40 | N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STP14NK60Z_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 0.45ヘ - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET |
| STP14NK60ZFP | 功能描述:MOSFET N-Ch, 600V-0.45ohms 13.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP14NM50N | 功能描述:MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP14NM65N | 功能描述:MOSFET N-channel 650V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP150N10F7 | 功能描述:MOSFET N-CH 100V 110A TO-220 制造商:stmicroelectronics 系列:DeepGATE?，STripFET? VII 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:100V 電流 - 連續(xù)漏極（Id）（25°C 時）:110A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:4.2 毫歐 @ 55A，10V 不同 Id 時的 Vgs（th）（最大值）:4.5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:117nC @ 10V 不同 Vds 時的輸入電容（Ciss）:8115pF @ 50V 功率 - 最大值:250W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 供應商器件封裝:TO-220 標準包裝:50 |
發(fā)布緊急采購，3分鐘左右您將得到回復。