參數(shù)資料
型號(hào)： STW18NB40
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET
中文描述： N溝道400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET的
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 142K
代理商： STW18NB40
1/7
PRELIMINARY DATA
June 2002
STW18NB40
STH18NB40FI
N-CHANNEL 400V - 0.19
- 18.4 A TO-247/ISOWATT218
PowerMesh MOSFET
(1)I
SD
<18.4A, di/dt<200A/μ, V
DD
<V
(BR)DSS
,TJ<T
JMAX
INTERNAL SCHEMATIC DIAGRAM
I
TYPICAL R
DS
(on) = 0.19
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW18NB40
STH18NB40FI
400 V
400 V
< 0.26
< 0.26
18.4 A
12.4 A
Parameter
Value
Unit
STW18NB40
STH18NB40FI
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
400
V
400
V
Gate- source Voltage
±30
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
18.4
12.4
A
11.6
7.8
A
Drain Current (pulsed)
73.6
73.6
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
190
80
W
1.52
4.5
0.64
4.5
W/°C
V/ns
dv/dt (1)
V
ISO
T
stg
T
j
Insulation Withstand Voltage (DC)
-
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
TO-247
ISOWATT218
1
2
3
1
2
3
相關(guān)PDF資料
PDF描述
STH18NB40 N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET
STW18NK80Z N-CHANNEL 800V - 0.34W - 19A TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STW200NF03 N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET⑩ II MOSFET
STW3100 TRANSCEIVER MODULE
STW38NB20 N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STW18NB40FI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET
STW18NK60Z 功能描述:MOSFET N-Ch 600 Volt 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW18NK80Z 功能描述:MOSFET N-Ch 800 Volt 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW18NK80Z_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800V - 0.34ヘ - 19A - TO-247 Zener-protected SuperMESH⑩ Power MOSFET
STW18NM60N 功能描述:MOSFET N-channel 600 V 0.27ohms 13A Mdmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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