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參數(shù)資料
| 型號： | STP11NM60FD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 0.40ohm - 11A TO-220 / TO-220FP/I2PAK FDmesh?Power MOSFET with FAST DIODE |
| 中文描述： | N溝道600V的- 0.40ohm - 11A至- 220 / TO-220FP/I2PAK FDmesh？功率MOSFET，快速二極管 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 332K |
| 代理商： | STP11NM60FD |
3/13
STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1
DYNAMIC
Symbol
g
fs
(1)
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 5.5A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
5.2
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
1000
pF
Output Capacitance
208
pF
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
28
pF
C
oss eq.
(2)
V
GS
= 0V, V
DS
= 0V to 400V
100
pF
R
G
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3
Parameter
Test Conditions
V
DD
= 250V, I
D
= 5.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 400V, I
D
= 11A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
Turn-on Delay Time
20
ns
t
r
Rise Time
16
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
28
40
nC
Gate-Source Charge
7.8
nC
Gate-Drain Charge
13
nC
Parameter
Test Conditions
V
DD
= 400V, I
D
= 11A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
10
ns
Fall Time
15
ns
Cross-over Time
24
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
11
A
Source-drain Current (pulsed)
44
A
Forward On Voltage
I
SD
= 11A, V
GS
= 0
I
SD
= 11A, di/dt = 100A/μs,
V
DD
= 50V
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
190
ns
Reverse Recovery Charge
1.1
μC
Reverse Recovery Current
14.5
A
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相關(guān)代理商/技術(shù)參數(shù) |
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| STP11NM60FDFP | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM60FP | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM60N | 功能描述:MOSFET N-channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM60ND | 功能描述:MOSFET N-channel 600V, 10A FDMesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM65N | 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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