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參數資料
| 型號： | STP11NB40FP |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 400V-0.48Ω-10.7A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道400V -0.48Ω- 10.7A - TO-220/TO-220FP PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁數： | 1/9頁 |
| 文件大小： | 115K |
| 代理商： | STP11NB40FP |
STP11NB40
STP11NB40FP
N - CHANNEL 400V - 0.48
- 10.7A - TO-220/TO-220FP
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.48
I
EXTREMELYHIGH dV/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
September 1998
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP11NB40
STP11NB40FP
400
400
±
30
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
V
V
V
A
A
A
W
10.7
6.7
42.8
125
1.0
4.5
6.0
3.8
42.8
40
0.32
4.5
W/
o
C
V/ns
dv/dt(
1
)
V
ISO
T
stg
T
j
(
) Pulse width limited by safe operating area
Insulation Withstand Voltage (DC)
Storage Temperature
2000
V
o
C
o
C
-65 to 150
Max. Operating Junction Temperature
150
(
1
) I
SD
≤
10.7A, di/dt
≤
200A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.55
< 0.55
I
D
STP11NB40
STP11NB40FP
400 V
400 V
10.7 A
6.0 A
1/9
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STP11NC40 | 功能描述:MOSFET N-Ch 400 Volt 9.5 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NC40FP | 功能描述:MOSFET N-Ch 400 Volt 9.5 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NK40Z | 功能描述:MOSFET N-Ch 400 Volt 9 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NK40Z | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP11NK40ZFP | 功能描述:MOSFET N-Ch, 400V-0.49ohms Zener SuperMESH 9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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