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參數(shù)資料
| 型號(hào)： | STM6930 |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 704K |
| 代理商： | STM6930 |
STM6930
Parameter
Symbol
Condition
Min
Typ
Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =1.7A
0.8
1.2
V
b
C
Notes
a.Surface Mounted on FR4 Board, t 10sec.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external Rg=6 ohm and tf < tf max
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current(A)
I
D
,
C
I
D
,
3
20
16
12
8
4
0
0
1
2
3
4
5
6
V
GS
=10,9,8,7,6,5V
V
GS
=4V
-55 C
25 C
25
20
15
10
5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Tj=125 C
Tj=( C )
1.6
1.4
1.2
1.0
0.6
0.4
0
-50
0
50
100
V
GS
=10V
1500
1250
1000
750
500
250
0
0
5
10
15
20
25
30
Ciss
Coss
Crss
V
GS
=3V
-25
25
75
125
150
V
GS
=10V
I
D
=4.8A
R
,
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