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參數(shù)資料
| 型號： | STM6930 |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 704K |
| 代理商： | STM6930 |
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
=
55
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
GS
0V
=
1
Gate-Body Leakage
I
GSS
V
GS
25V, V
DS
0V
=
100
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
1.0
2.5
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
10V, I
D
4.5A
=
V
GS
4.5V, I
D
4A
=
65
On-State Drain Current
I
D(ON)
g
V
DS
= 5V, V
GS
= 10V
A
S
Forward Transconductance
FS
V
DS
5V, I
D
4.5A
=
DYNAMIC CHARACTERISTICS
c
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHARACTERISTICS
Turn-On Delay Time
c
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 30V
I
D
= 4.8 A
V
GS
= 10V
R
GEN
= 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=48V, I
D
= 4.8 A
V
GS
=10V
nC
nC
nC
nC
C
Fall Time
=
=
=
2
5
45
1.9
uA
m ohm
m ohm
V
DS
=48V, I
D
=4.8A,V
GS
=10V
V
DS
=48V, I
D
=4.8A,V
GS
=4.5V
35
20
60
80
900
19
12
22
5
19
4.5
4
9
55
9
ohm
Rg
Gate resistance
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
2
25
104
1170
7
25
78
16
29
6
5
12
STM6930
ELECTRICAL CHARACTERISTICS (T
A
25 C unless otherwise noted)
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