參數(shù)資料
型號(hào): STM32F102RBT6TR
廠商: STMICROELECTRONICS
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQFP64
封裝: 10 X 10 MM, 0.50 MM PITCH, ROHS COMPLIANT, LQFP-64
文件頁(yè)數(shù): 26/69頁(yè)
文件大?。?/td> 805K
代理商: STM32F102RBT6TR
Electrical characteristics
STM32F102x8, STM32F102xB
Table 14.
Maximum current consumption in Sleep mode, code running from Flash or RAM
Symbol
Parameter
Conditions
fHCLK
Max(1)
Unit
TA = 85 °C
IDD
Supply current in
Sleep mode
External clock(2) all
peripherals enabled
48 MHz
20
mA
36 MHz
15.5
24 MHz
11.5
16 MHz
8.5
8 MHz
5.5
External clock(2), all
peripherals disabled
48 MHz
6
36 MHz
5
24 MHz
4.5
16 MHz
4
8 MHz
3
1.
Based on characterization, tested in production at VDD max, fHCLK max.
2.
External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
Table 15.
Typical and maximum current consumptions in Stop and Standby modes
Symbol
Parameter
Conditions
Typ(1)
Max
Unit
VDD/ VBAT
= 2.4 V
VDD/VBAT
= 3.3 V
TA =
85 °C
IDD
Supply current
in Stop mode
Regulator in Run mode,
Low-speed and high-speed internal RC
oscillators and high-speed oscillator OFF (no
independent watchdog)
23.5
24
200
A
Regulator in Low Power mode,
Low-speed and high-speed internal RC
oscillators and high-speed oscillator OFF (no
independent watchdog)
13.5
14
180
Supply current
in Standby
mode(2)
Low-speed internal RC oscillator and
independent watchdog ON
2.6
3.4
TBD(3)
Low-speed internal RC oscillator ON,
independent watchdog OFF
2.4
3.2
Low-speed internal RC oscillator and
independent watchdog OFF, low-speed
oscillator and RTC OFF
1.7
2
4
IDD_VBAT
Backup domain
supply current
Low-speed oscillator and RTC ON
1.1
1.4
1.9(4)
1.
Typical values are measured at TA = 25 °C.
2.
To have the Standby consumption with RTC ON, add IDD_VBAT (Low-speed oscillator and RTC ON) to IDD Standby (when
VDD is present the Backup Domain is powered by VDD supply).
3.
TBD stands for to be determined.
4.
Based on characterization, not tested in production.
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