參數(shù)資料
型號(hào)： STM1404
廠商： 意法半導(dǎo)體
英文描述： Security Supervisor with Battery Switchover(帶電池轉(zhuǎn)換功能的安全監(jiān)控器)
中文描述： 安全監(jiān)控與電池切換（帶電池轉(zhuǎn)換功能的安全監(jiān)控器）
文件頁(yè)數(shù)： 17/36頁(yè)
文件大?。?/td> 362K
代理商： STM1404
STM1404
Operation
17/36
Figure 9.
Power-fail comparator waveform
Negative-going V
CC
transients and undershoot
The STM1404 devices are relatively immune to negative-going V
CC
transients (glitches).
Figure 23 on page 23
was generated using a negative pulse applied to V
CC
, starting at V
RST
+ 0.3V and ending below the reset threshold by the magnitude indicated (comparator
overdrive). The graph indicates the maximum pulse width a negative V
CC
transient can have
without causing a reset pulse. As the magnitude of the transient increases (further below the
threshold), the maximum allowable pulse width decreases. Any combination of duration and
overdrive which lies under the curve will NOT generate a reset signal. Typically, a V
CC
transient that goes 100mV below the reset threshold and lasts 40μs or less will not cause a
reset pulse. A 0.1μF bypass capacitor mounted as close as possible to the V
CC
pin provides
additional transient immunity (see
Figure 10
).
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
CC
that drive it to values below V
SS
by as much as
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, STMicroelectronics recommends
connecting a schottky diode from V
CC
to V
SS
(cathode connected to V
CC
, anode to V
SS
).
Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is
recommended for surface mount.
Figure 10.
Supply voltage protection
AI08861a
VCC
VRST
VSW (2.4V)
trec
RST
PFO
PFO follows PFI
PFO follows PFI
AI02169
VCC
0.1
μ
F
DEVICE
VCC
VSS
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