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參數(shù)資料
| 型號： | STK12C68-45M |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM |
| 中文描述： | 的CMOS非易失SRAM 8K的乘八自動存儲非易失靜態(tài)RAM |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 72K |
| 代理商： | STK12C68-45M |
STK12C68-M
4-58
28
t
AVAV
t
RC
STORE/RECALLInitiation Cycle Time
35
45
55
ns
29
t
ELQZp
Chip Enable to Output Inactive
85
85
85
ns
30
t
AVELN
t
AE
Address Set-up to Chip Enable
0
0
0
ns
31
t
ELEHNq,r
t
EP
Chip Enable Pulse Width
25
35
45
ns
32
t
EHAXN
t
EA
Chip Disable to Address Change
0
0
0
ns
SOFTWARE STORE/RECALL CYCLE
q,r,t
ADDRESS
E
DQ(Data Out)
VALID
ADDRESS #6
ADDRESS #1
VALID
HIGH IMPEDANCE
28
t
AVAV
28
t
AVAV
30
t
AVELN
31
t
ELEHN
32
t
EHAXN
23
t
STORE
22
t
RECALL
29
t
ELQZ
ADDRESS #2
Std.
Alt.
MIN
MAX
MIN
MAX
MIN
MAX
NO.
PARAMETER
UNITS
SYMBOLS
STK12C68-40M
STK12C68-45M
STK12C68-55M
Note p: Once the software STOREor RECALLcycle is initiated, it completes automatically, ignoring all inputs.
Note q: Noise on the E pin may trigger multiple read cycles from the same address and abort the address sequence.
Note r: If the Chip Enable Pulse Width is less than t
ELQV
(see READ CYCLE #2) but greater than or equal to t
ELEHN
, then the data may not be valid at the end
of the low pulse, however the STORE or RECALLwill still be initiated.
Note s: W must be HIGH when E is LOW during the address sequence in order to initiate a nonvolatile cycle. G may be either HIGH or LOW throughout.
Addresses #1 through #6 are found in the MODE SELECTION table. Address #6 determines whether the STK12C68-M performs a STORE or RECALL
Note t:
E must be used to clock in the address sequence for the Software STORE and RECALL cycles.
SOFTWARE STORE/RECALL CYCLE
(V
CC
= 5.0V
±
10%)
d
相關PDF資料 |
PDF描述 |
|---|---|
| STK12C68-55M | CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM |
| STK12C68-5L40M | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 24pF; Working Voltage (Vdc)[max]: 2000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1206; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.126" x 0.063"; Container: Bulk; Features: High Voltage; Unmarked |
| STK12C68-M | CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM |
| STK12C68-5K40M | Ground Cord; Features:Tough vinyl cord and strain relief provide long life; 15' cord.; 3/8? stud (male) for mat conn..;#10 ring terminal for ground conn.; Terminal Type:Ring RoHS Compliant: NA |
| STK14C88-5C35M | 32K x 8 AUTOSTORE nvSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STK12C68-5C35M | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-5C55M | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-5K35M | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-5K55M | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-5L35M | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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