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參數(shù)資料
| 型號： | STK12C68-45M |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM |
| 中文描述： | 的CMOS非易失SRAM 8K的乘八自動存儲非易失靜態(tài)RAM |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 72K |
| 代理商： | STK12C68-45M |
STK12C68-M
4-57
Note e: These parameters guaranteed but not tested.
Note n: HSB is an I/O that has a weak internal pullup; it is basically an open drain output. It is meant to allow up to 32 STK12C68-Ms to be ganged together for
simultaneous storing. Do not use HSB to pullup any external circuitry other than other STK12C68-M HSB pins.
Note o: A RECALL cycle is initiated automatically at power up when V
CC
exceeds V
SWITCH
. t
RECALL
is measured from the point at which V
CC
exceeds 4.5V.
22
t
RECALL
RECALLCycle Duration
20
μ
s
Note o
23
t
STORE
t
HLHH
STORECycle Duration
10
ms
V
CC
≥
4.5V
24
t
DELAY
t
HLQZ
HSB Low to Inhibit On
1
μ
s
25
t
RECOVER
t
HHQX
HSB High to Inhibit Off
300
ns
Note e
26
t
ASSERT
t
HLHX
External STOREPulse Width
250
ns
Note e
V
SWITCH
Low Voltage Trigger Level
4.0
4.5
V
I
HSB_OL
HSB Output Low Current
3
mA
HSB = V
OL
, Note e, n
I
HSB_OH
HSB Output High Current
5
60
μ
A
HSB = V
IL
, Note e, n
NONVOLATILE MEMORY OPERATION
MODE SELECTION
H
X
H
X
Not Selected
Output High Z
Standby
L
L
H
L
H
H
X
X
Read SRAM
Write SRAM
Output Data
Input Data
Active
Active
l
L
H
H
0000
Read SRAM
Output Data
Active
k,l
1555
0AAA
Read SRAM
Read SRAM
Output Data
Output Data
k,l
k,l
1FFF
Read SRAM
Output Data
k,l
10F0
0F0F
Read SRAM
Nonvolatile STORE
Output Data
Output High Z
k,l
k
L
H
H
0000
Read SRAM
Output Data
Active
k,l
1555
0AAA
Read SRAM
Read SRAM
Output Data
Output Data
k,l
k,l
1FFF
Read SRAM
Output Data
k,l
10F0
0F0E
Read SRAM
Nonvolatile RECALL
Output Data
Output High Z
k,l
k
X
X
L
X
STOREInhibit
Output High Z
I
CC
/Standby
2
m
E
W
HSB
A
12
- A
0
(hex)
MODE
I/O
POWER
NOTES
Note k: The six consecutive addresses must be in order listed - (0000, 1555, 0AAA, 1FFF, 10F0, 0F0F) for a STORE cycle or (0000, 1555, 0AAA, 1FFF, 10F0,
0F0E) for a RECALL
cycle. W must be high during all six consecutive cycles. See STORE
cycle
and
RECALL
cycle
tables and diagrams for further details.
Note l: I/O state assumes that G
≤
V
IL
. Activation of nonvolatile cycles does not depend on the state of G.
Note m: HSB initiated STORE operation actually occurs only if a WRITE has been done since last STOREoperation. After the STORE(if any) completes, the
part will go into standby mode inhibiting all operation until HSB rises.
HARDWARE STORE/RECALL
SYMBOLS
NO.
PARAMETER
MIN
MAX
UNITS
NOTES
HSB
W
RECALL
STORE
SRAM
Inhibit
Software STORE
HSB Initiated STORE
Power Down STORE
Brown Out RECALL
Power Up RECALL
V
SWITCH
V
CAP
24
t
DELAY
26
t
ASSERT
22
t
RECALL
24
t
DELAY
25
t
RECOVER
23
t
STORE
23
t
STORE
23
t
STORE
HARDWARE STORE/RECALL
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STK12C68-5C35M | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-5C55M | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-5K35M | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-5K55M | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-5L35M | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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