參數(shù)資料
型號： STGP7NB60
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 7A - 600V TO-220 PowerMESH IGBT
中文描述： N溝道第7A - 600V到- 220 PowerMESH IGBT的
文件頁數(shù)： 1/11頁
文件大小： 505K
代理商： STGP7NB60
1/11
June 2003
STGP7NB60MD - STGB7NB60MD
N-CHANNEL 7A - 600V
TO-220 / D
2
PAK
PowerMESH IGBT
I
HIGH INPUT IMPEDANCE
I
LOW ON-VOLTAGE DROP (V
cesat
)
I
OFF LOSSES INCLUDE TAIL CURRENT
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
HIGH FREQUENCY OPERATION
I
CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH IGBTs, with outstanding perfomances.
The suffix "M" identifies a family optimized to
achieve very low switching switching times for high
frequency applications (<20KHZ)
APPLICATIONS
I
MOTOR CONTROLS
I
SMPS AND PFC AND BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE
TYPE
V
CES
V
CE(sat) (Max)
@25°C
I
C
@100°C
STGP7NB60MD
STGB7NB60MD
600 V
600 V
< 1.9
V
< 1.9V
7 A
7 A
MARKING
PACKAGE
PACKAGING
STGP7NB60MD
GP7NB60MD
TO-220
TUBE
STGB7NB60MDT4
GB7NB60MD
D
2
PAK
TAPE & REEL
TO-220
1
2
3
D
2
PAK
1
3
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STGP7NB60H N-CHANNEL 7A - 600V TO-220 PowerMESH IGBT
STGP7NB60M N-CHANNEL 7A - 600V TO-220/DPAK POWERMESH IGBT
STGD7NB60MT4 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:50pF; Holding Current:150mA
STH10NK60ZFI TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-218VAR
STB10NK60ZT4 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGP7NB60F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
STGP7NB60FD 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH? IGBT
STGP7NB60H 功能描述:IGBT 晶體管 RO 511-STGP7NB60K RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGP7NB60HD 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGP7NB60HDFP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V TO-220/FP PowerMESH IGBT
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