參數(shù)資料
型號: STF8A60
廠商: Electronic Theatre Controls, Inc.
英文描述: Bi-Directional Triode Thyristor
中文描述: 雙向可控硅三極管
文件頁數(shù): 1/6頁
文件大?。?/td> 751K
代理商: STF8A60
Absolute Maximum Ratings
( T
J
= 25°C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(RMS)
R.M.S On-State Current
T
C
= 89 °C
8.0
A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
80/88
A
I
2
t
I
2
t
32
A
2
s
P
GM
Peak Gate Power Dissipation
5.0
W
P
G(AV)
Average Gate Power Dissipation
0.5
W
I
GM
Peak Gate Current
2.0
A
V
GM
Peak Gate Voltage
10
V
V
ISO
Isolation Breakdown Voltage(R.M.S.)
A.C. 1 minute
1500
V
T
J
Operating Junction Temperature
- 40 ~ 125
°C
T
STG
Storage Temperature
- 40 ~ 150
°C
Mass
2.0
g
STF8A60
UL : E228720
Mar, 2003. Rev. 2
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 8 A )
High Commutation dv/dt
Isolation Voltage ( V
ISO
= 1500V AC )
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
2.T2
3.Gate
1.T1
Symbol
TO-220F
▼▲
1/6
1
2
3
SemiWell
Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
相關(guān)PDF資料
PDF描述
STGF7NB60SL N-CHANNEL 7A - 600V - TO-220FP PowerMESH IGBT
STGF7NB60SL N-CHANNEL 7A - 600V - TO-220FP PowerMESH IGBT
STH51005G 1300 nm Laser in Coaxial Package with SM-Pigtail, High Power
STH51004A 1300 nm Laser in Coaxial Package with SM-Pigtail, High Power
STH51004G 1300 nm Laser in Coaxial Package with SM-Pigtail, High Power
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STF8A80 制造商:WINSEMI 制造商全稱:WINSEMI 功能描述:Bi-Directional Triode Thyristor
STF8N65M5 功能描述:MOSFET N-Ch 650V 0.56 Ohm 7A MDmesh V PWR MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STF8N80K5 功能描述:MOSFET N-Ch 800V 0.76 Ohm 6ASuperMESH 5 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STF8N90K5 功能描述:N-CHANNEL 900 V, 0.60 OHM TYP., 制造商:stmicroelectronics 系列:MDmesh? K5 包裝:管件 零件狀態(tài):在售 FET 類型:N 溝道 技術(shù):MOSFET(金屬氧化物) 漏源電壓(Vdss):900V 電流 - 連續(xù)漏極(Id)(25°C 時):8A(Tc) 驅(qū)動電壓(最大 Rds On,最小 Rds On):10V 不同 Id 時的 Vgs(th)(最大值):5V @ 100μA Vgs(最大值):±30V FET 功能:- 功率耗散(最大值):130W(Tc) 不同?Id,Vgs 時的?Rds On(最大值):- 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:通孔 供應(yīng)商器件封裝:TO-220FP 封裝/外殼:TO-220-3 整包 標(biāo)準(zhǔn)包裝:50
STF8NK100Z 功能描述:MOSFET N-Ch 1000 V 1.6 Ohm Zener SuperMESH 6.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube