參數(shù)資料
型號: STD5N20LT4
廠商: 意法半導體
英文描述: N-CHANNEL 200V - 0.65ヘ - 5A DPAK STripFET⑩ MOSFET
中文描述: N溝道200伏- 0.65ヘ- 5A條的DPAK STripFET⑩MOSFET的
文件頁數(shù): 10/10頁
文件大?。?/td> 235K
代理商: STD5N20LT4
STD5N20L
10/10
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相關代理商/技術參數(shù)
參數(shù)描述
STD5N20T4 功能描述:MOSFET N-Ch 200 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD5N52K3 功能描述:MOSFET N-CH 525 V 4.4 A SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD5N52U 功能描述:MOSFET N-channel 525 V 4.4 A DPAK TO-220F RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD5N60DM2 功能描述:N-CHANNEL 600 V, 0.26 OHM TYP., 制造商:stmicroelectronics 系列:MDmesh?? 包裝:Digi-Reel? 零件狀態(tài):在售 FET 類型:N 溝道 技術:MOSFET (Metal Oxide) 漏源極電壓(Vdss):600V 電流 - 連續(xù)漏極(Id)(25°C 時):3.5A(Tc) 不同?Id,Vgs 時的?Rds On(最大值):1.55 歐姆 @ 1.75A,10V 不同 Id 時的 Vgs(th)(最大值):5V @ 250μA 不同 Vgs 時的柵極電荷(Qg):8.6nC @ 10V 不同 Vds 時的輸入電容(Ciss):375pF @ 100V FET 功能:- 功率耗散(最大值):* 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:TO-252-3,DPak(2 引線+接片),SC-63 供應商器件封裝:DPAK 標準包裝:1
STD5N60M2 功能描述:MOSFET N-CH 600V 3.7A DPAK 制造商:stmicroelectronics 系列:MDmesh? II Plus 包裝:剪切帶(CT) 零件狀態(tài):有效 FET 類型:MOSFET N 通道,金屬氧化物 FET 功能:標準 漏源極電壓(Vdss):600V 電流 - 連續(xù)漏極(Id)(25°C 時):3.5A(Tc) 不同?Id,Vgs 時的?Rds On(最大值):1.4 歐姆 @ 1.7A,10V 不同 Id 時的 Vgs(th)(最大值):4V @ 250μA 不同 Vgs 時的柵極電荷(Qg):8.5nC @ 10V 不同 Vds 時的輸入電容(Ciss):211pF @ 100V 功率 - 最大值:45W 工作溫度:150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:TO-252-3,DPak(2 引線+接片),SC-63 供應商器件封裝:D-Pak 標準包裝:1