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參數(shù)資料
| 型號(hào)： | STD50N03L-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 30V - 9.2mohm - 40A - DPAK/IPAK STripFET TM III Power MOSFET |
| 中文描述： | N溝道30V的- 9.2mohm - 40A條-的DPAK /像是iPak STripFET商標(biāo)第三功率MOSFET |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 325K |
| 代理商： | STD50N03L-1 |
STD50N03L - STD50N03L-1
Buck converter
9/16
Appendix A
Buck converter
The power losses associated with the FETs in a Synchronous Buck converter can be
estimated using the equations shown in the table below. The formulas give a good
approximation, for the sake of performance comparison, of how different pairs of devices
affect the converter efficiency. However a very important parameter, the working
temperature, is not considered. The real device behavior is really dependent on how the
heat generated inside the devices is removed to allow for a safer working junction
temperature.
The low side (SW2) device requires:
■
Very low R
DS(on)
to reduce conduction losses
■
Small Qgls to reduce the gate charge losses
■
Small Coss to reduce losses due to output capacitance
■
Small Qrr to reduce losses on SW1 during its turn-on
■
The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source
■
voltage to avoid the cross conduction phenomenon;
The high side (SW1) device requires:
■
Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on the
gate
■
Small Qg to have a faster commutation and to reduce gate charge losses
Low R
DS(on)
to reduce the conduction losses.
Figure 18. Power losses estimation
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相關(guān)代理商/技術(shù)參數(shù) |
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| STD50NH02L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 24V - 0.0085ohm - 50A - DPAK/IPAK STripFET TM III Power MOSFET |
| STD50NH02L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 24V - 0.0085ohm - 50A - DPAK/IPAK STripFET TM III Power MOSFET |
| STD50NH02L-1 | 功能描述:MOSFET N-CH 24V 50A I-PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:STripFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| STD50NH02LT4 | 功能描述:MOSFET N Ch 24V 0.0085 OHM 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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