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參數(shù)資料
| 型號(hào)： | STD4N25 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式功率MOS晶體管（不適用溝道增強(qiáng)模式功率MOSFET的） |
| 文件頁(yè)數(shù)： | 10/10頁(yè) |
| 文件大小： | 142K |
| 代理商： | STD4N25 |
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STD4N25
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD4N25-1 | 功能描述:MOSFET DISC BY STM 4/01 TO-251 N-CH 250V 4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD4N25T4 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4A I(D) | TO-252 |
| STD4N52K3 | 功能描述:MOSFET N-Ch 525V 1.2 ohm 4.4 A SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD4N62K3 | 功能描述:MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD4N80K5 | 制造商:STMicroelectronics 功能描述:POWER MOSFET - Tape and Reel 制造商:STMicroelectronics 功能描述:MOSFET N-CH 800V 3A DPAK 制造商:STMicroelectronics 功能描述:STD4N80K5 Series 800 V 3 A 2.5 Ohm N-channel Power MOSFET - TO-252-3 |
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