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參數(shù)資料
| 型號(hào)： | STD40NF3LLT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 30V - 0.009ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET |
| 中文描述： | N溝道30V的- 0.009ohm - 40A條- DPAK封裝低柵極電荷STripFET商標(biāo)二功率MOSFET |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 372K |
| 代理商： | STD40NF3LLT4 |
Electrical characteristics
STD40NF3LL
4/13
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250
μ
A, V
GS
=0
30
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= max rating
V
DS
= max rating,
T
C
= 125°C
1
10
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±16V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250μA
1
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 10A
0.0090
0.0115
0.0110
0.0135
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
Forward
transconductance
V
DS
= 15V
,
I
D
= 20A
23
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1MHz,
V
GS
= 0
1650
540
130
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 15V, I
D
= 20A
R
G
= 4.7
V
GS
=4.5V
(see
Figure 13
)
23
156
27
28
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=
15V, I
D
= 20A,
V
GS
= 4.5V, R
G
= 4.7
(see
Figure 14
)
24
8.5
12
33
nC
nC
nC
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