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參數(shù)資料
| 型號： | STD40NF3LLT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 30V - 0.009ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET |
| 中文描述： | N溝道30V的- 0.009ohm - 40A條- DPAK封裝低柵極電荷STripFET商標(biāo)二功率MOSFET |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 372K |
| 代理商： | STD40NF3LLT4 |
STD40NF3LL
Electrical ratings
3/13
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 k
)
30
V
V
DGR
30
V
V
GS
I
D(1)
Gate- source voltage
± 16
V
1.
Current limited by package
Drain current (continuous) at T
C
= 25°C
40
A
I
D
Drain current (continuous) at T
C
= 100°C
28
A
I
DM(2)
2.
Pulse width limited by safe operating area.
I
SD
≤
40A, di/dt
≤
350A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
Starting T
j
= 25 °C, I
D
= 20A, V
DD
= 25V
Drain current (pulsed)
160
A
P
tot
Total dissipation at T
C
= 25°C
80
W
Derating Factor
0.53
W/°C
dv/dt
(3)
3.
Peak diode recovery voltage slope
5.5
V/ns
E
AS (4)
4.
Single pulse avalanche energy
850
mJ
T
stg
Storage temperature
-55 to 175
°C
T
j
Max. operating junction temperature
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
1.88
°C/W
Rthj-amb
Thermal resistance junction-ambient max
100
°C/W
T
J
Maximum lead temperature for soldering purpose
300
°C
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