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參數(shù)資料
| 型號： | STD3NM60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET |
| 中文描述： | N溝道600V的- 1.3ohm -第3A TO-220/DPAK/IPAK齊納⑩保護(hù)的MDmesh功率MOSFET |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 548K |
| 代理商： | STD3NM60 |
3/12
STP4NM60 / STD3NM60 / STD3NM60-1
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
10
μA
μA
V
GS
= ± 20V
±5
μA
3
4
5
V
V
GS
= 10V, I
D
= 1.5 A
1.3
1.5
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 1.5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
2.7
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
324
132
7.4
pF
pF
pF
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 1.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480V, I
D
= 3 A,
V
GS
= 10V
Min.
Typ.
9
4
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
10
3
4.7
14
nC
nC
nC
Parameter
Test Conditions
V
DD
= 480 V, I
D
= 3 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
Fall Time
Cross-over Time
16.5
10.5
15
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
3
12
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 3 A, V
GS
= 0
I
SD
= 3 A, di/dt = 100A/μs
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
224
1
9
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 3 A, di/dt = 100A/μs
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
296
1.4
9.3
ns
μC
A
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| STD3NM60-1 | 功能描述:MOSFET N-Ch, 600V-1.3ohms Mdmesh 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NM60N | 功能描述:MOSFET N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NM60T4 | 功能描述:MOSFET N-Ch 600 Volt 3 Amp Power MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3PK50Z | 功能描述:MOSFET P-Ch 500V 3 Ohm 2.8A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3PS25 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET |
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