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參數(shù)資料
| 型號： | STD3NM60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET |
| 中文描述： | N溝道600V的- 1.3ohm -第3A TO-220/DPAK/IPAK齊納⑩保護的MDmesh功率MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 548K |
| 代理商： | STD3NM60 |
1/12
September 2002
STP4NM60
STD3NM60 - STD3NM60-1
N-CHANNEL 600V - 1.3
- 3A TO-220/DPAK/IPAK
Zener-Protected MDmeshPower MOSFET
I
TYPICAL R
DS
(on) = 1.3
I
HIGH dv/dt AND AVALANCHE CAPABILITIES
I
IMPROVED ESD CAPABILITY
I
LOW INPUT CAPACITANCE AND GATE
CHARGE
I
LOW GATE INPUT RESISTANCE
I
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
APPLICATIONS
The MDmesh family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP4NM60
STD3NM60
STD3NM60-1
600 V
600 V
600 V
< 1.5
< 1.5
< 1.5
4 A
3 A
3 A
69 W
42 W
42 W
MARKING
PACKAGE
PACKAGING
STP4NM60
P4NM60
TO-220
TUBE
STD3NM60T4
D3NM60
DPAK
TAPE & REEL
STD3NM60-1
D3NM60
IPAK
TUBE
TO-220
IPAK
DPAK
1
3
3
2
1
INTERNAL SCHEMATIC DIAGRAM
相關PDF資料 |
PDF描述 |
|---|---|
| STP4NM60 | N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET |
| STD40NF02L | N-CHANNEL 20V - 0.01 ohm - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET |
| STD40NF03LT4 | N-channel 30V - 0.0090ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET |
| STD40NF03L | N-CHANNEL 30V - 0.012 ohm - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET |
| STD40NF3LLT4 | N-channel 30V - 0.009ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD3NM60-1 | 功能描述:MOSFET N-Ch, 600V-1.3ohms Mdmesh 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NM60N | 功能描述:MOSFET N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NM60T4 | 功能描述:MOSFET N-Ch 600 Volt 3 Amp Power MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3PK50Z | 功能描述:MOSFET P-Ch 500V 3 Ohm 2.8A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3PS25 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET |
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