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參數(shù)資料
| 型號： | STD3NK60ZT4 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道600V的- 3.3ohm - 2.4? TO-220/FP/D2PAK/DPAK/IPAK齊保護的SuperMESH⑩功率MOSFET |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 755K |
| 代理商： | STD3NK60ZT4 |
STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1
2/15
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
2.4 A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
STP3NK60Z
STB3NK60Z
STP3NK60ZFP
STD3NK60Z
STD3NK60Z-1
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
2.4
2.4 (*)
2.4 (*)
A
1.51
1.51 (*)
1.51 (*)
A
9.6
9.6 (*)
9.6 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
45
20
45
W
0.36
0.16
0.36
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
2100
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
-
V
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220
D
2
PAK
2.78
TO-220FP
DPAK
IPAK
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
6.25
2.78
100
°C/W
°C/W
°C
62.5
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
2.4
Unit
A
150
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STD3NK80Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800V - 3.8ヘ - 2.5A - TO-220/TO-220FP/DPAK/IPAK Zener-protected SuperMESH⑩ Power MOSFET |
| STD3NK80Z_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH? Power MOSFET |
| STD3NK80Z-1 | 功能描述:MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NK80Z-1-H | 制造商:ST 功能描述:N-channel 800 V, 3.8 |
| STD3NK80ZT4 | 功能描述:MOSFET N-Ch 800 Volt 2.5A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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