- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380761 > STB40NF03L (意法半導(dǎo)體) N - CHANNEL 30V - 0.020 ohm - 40A D2PAK STripFET POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | STB40NF03L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 30V - 0.020 ohm - 40A D2PAK STripFET POWER MOSFET |
| 中文描述： | ? -通道30V的- 0.020歐姆- 40A條采用D2PAK STripFET功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 84K |
| 代理商： | STB40NF03L |
STB40NF03L
N - CHANNEL 30V - 0.020
- 40A D
2
PAK
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.020
I
LOW THRESHOLD DRIVE
I
ADD SUFFIX”T4” FORORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
”
strip-based
process.
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
”Single
The
Feature
resulting
rugged
avalanche
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
October 1999
1
3
D
2
PAK
TO-263
(Suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
30
30
±
20
40
28
160
70
0.46
250
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/
o
C
m/J
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
(
)
Pulse width limitedby safe operating area
E
AS
(
1
)
T
stg
T
j
(
1
)
starting T
j
= 25
o
C, I
D
=20A , V
DD
= 15V
TYPE
V
DSS
R
DS(on)
< 0.022
I
D
STB40NF03L
30 V
40 A
1/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB4395A | CT2 RECEIVER/TRANSMITTER |
| STB4395 | CT2 Receiver/Transmitter(CT2接收器/發(fā)送器) |
| STB45N10L | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB50NH02L | N-CHANNEL 24V - 0.011ohm - 50A DPAK STripFET⑩ III POWER MOSFET |
| STB55NE06L | N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強(qiáng)模式功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB40NF03LT4 | 制造商:STMicroelectronics 功能描述: |
| STB40NF10 | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 100V 50A D2PAK 制造商:STMicroelectronics 功能描述:STB40NF10 |
| STB40NF10 | 制造商:STMicroelectronics 功能描述:MOSFET N D2-PAK |
| STB40NF10_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.025ヘ - 50A - D2PAK Low gate charge STripFET⑩ II Power MOSFET |
| STB40NF10-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。