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參數(shù)資料
| 型號： | STB40NF03L |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 30V - 0.020 ohm - 40A D2PAK STripFET POWER MOSFET |
| 中文描述： | ? -通道30V的- 0.020歐姆- 40A條采用D2PAK STripFET功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 84K |
| 代理商： | STB40NF03L |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 24 V I
D
= 40 A V
GS
= 5 V
I
D
= 20 A
V
GS
= 4.5 V
35
205
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
18
7
8
23
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
R
G
= 4.7
(Resistive Load, see fig. 3)
Vclamp = 24 V
R
G
= 4.7
(Inductive Load, see fig. 5)
I
D
= 20 A
V
GS
= 4.5 V
90
240
ns
ns
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
I
D
= 20 A
V
GS
= 4.5 V
150
155
340
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
40
160
A
A
V
SD
(
)
t
rr
I
SD
= 40 A
I
SD
= 40 A
V
DD
= 15 V
(see test circuit, fig. 5)
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
di/dt = 100 A/
μ
s
T
j
= 150
o
C
65
72
2
ns
nC
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area
Thermal Impedance
STB40NF03L
3/8
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