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參數(shù)資料
| 型號(hào)： | STD35NF06LT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET⑩II MOSFET |
| 中文描述： | N溝道60V的- 0.014ohm - 35A條的DPAK STripFET第二MOSFET的⑩ |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 431K |
| 代理商： | STD35NF06LT4 |
1/9
November 2003
STD35NF06L
N-CHANNEL 60V - 0.014
- 35A DPAK
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.014
I
LOW THRESHOLD DRIVE
I
GATE CHARGE MINIMIZED
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
reproducibility.
manufacturing
APPLICATIONS
I
DC-AC CONVERTERS
I
AUTOMOTIVE SWITCHING APPLICATION
TYPE
V
DSS
R
DS(on)
I
D
STD35NF06L
60 V
< 0.017
35 A
1
3
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STD35NF06LT4
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1) I
SD
≤
35A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
=30V
MARKING
D35NF06L
PACKAGE
TO-252
PACKAGING
TAPE & REEL
Parameter
Value
60
60
± 16
35
24.5
140
80
0.67
5
280
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
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PDF描述 |
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| STD36NH02L | N-channel 24V - 0.011ohm - 30A - DPAK STripFET III Power MOSFET |
| STD4NA40-1 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-251 |
| STD4NA40 | 32-BIT W/ CACHE, MMU |
| STD4NA40-T4 | Leaded Cartridge Fuse; Current Rating:500mA; Voltage Rating:250V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:250V; Body Material:Glass; Diameter:4.7mm; Fuse Size/Group:5 x 15 mm; Leaded Process Compatible:Yes RoHS Compliant: Yes |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD35NF06T4 | 功能描述:MOSFET N-Ch 60 Volt 35 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD35NF06T4 | 制造商:STMicroelectronics 功能描述:MOSFET |
| STD35NF3LL | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 30V 35A DPAK |
| STD35NF3LL | 制造商:STMicroelectronics 功能描述:MOSFET N D-PAK |
| STD35NF3LL_07 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 30V - 0.014ohm - 35A - DPAK STripFET TM II Power MOSFET |
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