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參數(shù)資料
| 型號(hào)： | STD4NA40-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-251 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 3.3AI（四）|至251 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 169K |
| 代理商： | STD4NA40-1 |
STD4NA40
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 1.7
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
I
HIGH SPEED SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY (UPS)
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
INDUSTRIAL ACTUATORS
I
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
I
PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 2
I
D
STD4NA40
400 V
3.3 A
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
400
V
V
DGR
400
±
30
3.3
V
V
GS
V
I
D
A
I
D
2.1
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
13.2
A
50
W
Derating Factor
0.4
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD4NA40 | 32-BIT W/ CACHE, MMU |
| STD4NA40-T4 | Leaded Cartridge Fuse; Current Rating:500mA; Voltage Rating:250V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:250V; Body Material:Glass; Diameter:4.7mm; Fuse Size/Group:5 x 15 mm; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| STD5N20-1 | TRANSISTOR MOSFET TO 251 I PAK |
| STD5N20 | N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR |
| STD5NB20 | N-Channel 200V-0.7Ω-5A DPAK PowerMESH MOSFET(N溝道功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD4NA40-T4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-252 |
| STD4NB25 | 制造商:STMicroelectronics 功能描述: |
| STD4NB25T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4A I(D) | TO-252AA |
| STD4NB40 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH⑩ MOSFET |
| STD4NB40-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH⑩ MOSFET |
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