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參數(shù)資料
| 型號： | STD30NF06L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道60V的- 0.022ohm - 35A條的DPAK /像是iPak STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 461K |
| 代理商： | STD30NF06L |
1/10
July 2002
STD30NF06L
N-CHANNEL 60V - 0.022
- 35A DPAK/IPAK
STripFET POWER MOSFET
(1) I
SD
≤
38A, di/dt
≤
400A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
I
TYPICAL R
DS
(on) = 0.022
I
EXCEPTIONAL dv/dt CAPABILITY
I
LOGIC LEVEL GATE DRIVE
I
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
I
ADD SUFFIX “-1” FOR ORDERING IN IPAK
I
CHARACTERIZATION ORIENTED FOR
AUTOMOTIVE APPLICATIONS
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
Size
”
strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
“Single
Feature
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD30NF06L
60 V
<0.028
35 A
Parameter
Value
Unit
60
V
60
V
± 20
V
35
A
25
A
140
A
70
W
0.46
25
W/°C
V/ns
– 55 to 175
°C
DPAK
3
2
1
1
3
IPAK
INTERNAL SCHEMATIC DIAGRAM
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PDF描述 |
|---|---|
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| STD35NF06LT4 | N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET⑩II MOSFET |
| STD36NH02L | N-channel 24V - 0.011ohm - 30A - DPAK STripFET III Power MOSFET |
| STD4NA40-1 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-251 |
| STD4NA40 | 32-BIT W/ CACHE, MMU |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD30NF06L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-251AA |
| STD30NF06LT4 | 功能描述:MOSFET N-Ch 60 Volt 35 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD30NF06T4 | 功能描述:MOSFET N-channel 60 V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD30PF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:P-CHANNEL 30V - 0.025ohm - 24A DPAK/IPAK STripFET⑩ II POWER MOSFET |
| STD30PF03L-1 | 功能描述:MOSFET P-Ch 30 Volt 24 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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