參數(shù)資料
型號： STD30NF03LTT4
廠商： 意法半導(dǎo)體
英文描述： N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET
中文描述： N溝道30V的- 0.017ohm - 30A條-的DPAK STripFET商標(biāo)二功率MOSFET
文件頁數(shù)： 3/13頁
文件大?。?/td> 296K
代理商： STD30NF03LTT4
STD30NF03LT
Electrical ratings
3/13
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 k
)
30
V
V
DGR
30
V
V
GS
I
D(1)
Gate- source voltage
± 20
V
1.
Current limited by package
Drain current (continuous) at T
C
= 25°C
30
A
I
D
Drain current (continuous) at T
C
= 100°C
21
A
I
DM(2)
2.
Pulse width limited by safe operating area.
I
SD
≤
30A, di/dt
≤
400A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Starting T
j
= 25 °C, I
D
= 15A V
DD
= 25V
Drain current (pulsed)
120
A
P
tot
Total dissipation at T
C
= 25°C
50
W
Derating Factor
0.33
W/°C
dv/dt
(3)
3.
Peak diode recovery voltage slope
4
V/ns
E
AS (4)
4.
Single pulse avalanche energy
450
mJ
T
stg
Storage temperature
-55 to 175
°C
T
j
Max. operating junction temperature
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
3.0
°C/W
Rthj-amb
Thermal resistance junction-ambient max
100
°C/W
T
J
Maximum lead temperature for soldering purpose
275
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
40
A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 15 V)
2.3
J
相關(guān)PDF資料
PDF描述
STD30NF03L Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance Tolerance:+/- 20%; ESR:100mohm; Operating Temp. Max:125 C RoHS Compliant: Yes
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參數(shù)描述
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STD30NF06-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 28A I(D) | TO-251AA
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STD30NF06L-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-251AA
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