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參數(shù)資料
| 型號： | STD2NM60T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直|甲（丁）|對252AA |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 174K |
| 代理商： | STD2NM60T4 |
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1:
Unclamped Inductive Load Test Circuits
Fig. 2:
Unclamped Inductive Waveforms
STD2N50
6/10
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| STD30PF30L | Cartridge Fuse; Current Rating:5A; Voltage Rating:125V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P |
| STD30NF03L-1 | Cartridge Fuse; Current Rating:6A; Voltage Rating:125V; Fuse Type:Fast Acting; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Series:225P |
| STD30NF03LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-263AB |
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| STD30NF06L-1 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-251AA |
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