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參數(shù)資料
| 型號： | STD30NF03L-1 |
| 英文描述： | Cartridge Fuse; Current Rating:6A; Voltage Rating:125V; Fuse Type:Fast Acting; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Series:225P |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 30A條（丁）|對251AA |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 474K |
| 代理商： | STD30NF03L-1 |
1/10
May 2003
.
STD30PF30L
P-CHANNEL 30V - 0.025
- 24A IPAK/DPAK
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.025
I
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
I
LOW TRESHOLD DEVICE
I
LOW GATE CHARGE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This
MOSFET
STMicroelectronics unique “Single Feature Size” strip-
based process The resulting transistor shows extremely
high packing density for low on-resistance and low gate
charge.
is
the
latest
development
of
APPLICATIONS
I
DC-DC CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STD30PF30L
30 V
<0.028
24
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
Ordering Information
SALES TYPE
STD30PF03LT4
STD30PF03L-1
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D(#)
Drain Current (continuous) at T
C
= 25°C
I
D(#)
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(#) Current limited by wire bonding
(1) Starting T
j
= 25
o
C, I
D
=12 A, V
DD
= 15V
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
MARKING
D30PF30L
D30PF30L
PACKAGE
TO-252
TO-251
PACKAGING
TAPE & REEL
TUBE
Parameter
Value
30
30
± 16
24
24
96
70
0.47
850
Unit
V
V
V
A
A
A
W
W/°C
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD30NF03LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-263AB |
| STD30NF06-1 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 28A I(D) | TO-251AA |
| STD30NF06L-1 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-251AA |
| STD30NF06LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-252AA |
| STD30NF06T4 | Cartridge Fuse; Current Rating:2A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD30NF03LT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET |
| STD30NF03LT4 | 功能描述:MOSFET N-Ch 30 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD30NF03LTT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET |
| STD30NF04LT | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD30NF06 | 功能描述:MOSFET N-Ch 60 Volt 28 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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